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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT76AF DESCRIPTION *High Voltage *High Speed Switching *High Power Dissipation APPLICATIONS *Designed for switching mode power supply, inverters, motor control and relay driver applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 1000 450 7 12 20 3 6 40 150 -65~150 UNIT V V V A A A A W IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.13 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CES V(BR)EBO VCE(sat) VBE(sat) ICES IEBO hFE fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 0.5A; IB= 0; L= 125mH IC= 1mA; VBE= -1.5V IE= 1mA; IC= 0 IC= 5A; IB= 1A B BUT76AF MIN 450 1000 7 TYP. MAX UNIT V V V 1.5 1.6 0.5 2.0 0.5 3.2 7 150 V V mA mA IC= 5A; IB= 1A B VCE=1000V;VBE= -1.5V VCE=1000V;VBE=-1.5V;TC=100 VEB= 7V; IC= 0 IC= 8A ; VCE= 3V IC= 1A ; VCE= 10V IE= 0; VCB= 10V; ftest= 1.0MHz MHz pF Switching Times;Resistive Load ton ts tf Turn-On Time Storage Time Fall Time IC= 5A;IB1= -IB= 1A; VCE= 150V 1.0 3.0 0.8 s s s isc Websitewww.iscsemi.cn |
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